Transition metal 2p x-ray photoelectron and high-resolution Kα x-ray emission spectra of K2CrO4 and KMnO4

1999 ◽  
Vol 28 (6) ◽  
pp. 464-469 ◽  
Author(s):  
Masaoki Oku ◽  
Kazuaki Wagatsuma ◽  
Tokuzo Konishi
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.


2002 ◽  
Vol 71 (1) ◽  
pp. 347-356 ◽  
Author(s):  
Masahiko Matsubara ◽  
Takayuki Uozumi ◽  
Akio Kotani ◽  
Yoshihisa Harada ◽  
Shik Shin

1999 ◽  
Vol 5 (S2) ◽  
pp. 590-591
Author(s):  
A. Sandborg ◽  
R. Anderhalt

It is well known that chemical bonding affects elemental x-ray emission spectra. The spectra of low atomic number elements show energy shifts which depend on the bonding of the element. To observe these shifts, a high resolution wavelength dispersive (WDS) x-ray spectrometer is required. Intensity variations of the L series can be observed with an EDS system which also show chemical effects.The L Alphal and the L L radiations are produced from a vacancy in the L III shell. Normally the L L line is about 5 to 6% of the intensity of the L Alphal line. However, in the atomic number range of Z=21 to 28, it is easily observed that the L L line becomes more intense. The L Alphal is no longer present at Z=20. These intensity changes are due to the outer electron shells of these atoms being unfilled. The L Alphal comes from the L3-M5 transition, while the L L comes from L3-M1 transition. The M5 (3d level) of the M shell is partially filled for Z=21 to 28; empty for Z<21and full for Z> 28. Holliday observed a Ti LL which was 17% greater than the Ti L Alphal.


1995 ◽  
Vol 05 (02n03) ◽  
pp. 203-209 ◽  
Author(s):  
H. KAGEYAMA ◽  
R. TAKAHASHI ◽  
D. HAMAGUCHI ◽  
T. AWATA ◽  
T. NAKAE ◽  
...  

High resolution L x-ray emission spectra of Fe and Cu have been measured by 0.75 MeV/u H and He, and 0.73 MeV/u He, Si and Ar ion impacts with a crystal spectrometer. The x-ray transition energies in the Fe and Cu targets for Lι, Lη, Lα1,2, Lβ1 and Lβ3,4 diagram lines induced by light ion impacts are determined, which are in good agreement with those given in the reference. The difference in L x-ray emission spectra produced by H, He, Si and Ar ions is considered and the emission spectra for the Cu target are compared with the calculated ones based on the multiconfiguration Dirac-Fock method. The origin of the broadening of the Lα1,2 line to the lower energy for Si and Ar ion impacts is attributed to one 2p plus one 3d electron vacancy production.


2002 ◽  
Vol 09 (01) ◽  
pp. 313-318
Author(s):  
JOSELITO LABIS ◽  
AKIHIKO OHI ◽  
CHIHIRO KAMEZAWA ◽  
TOSHINORI FUJIKI ◽  
KENICHI YOSHIDA ◽  
...  

The Si L2,3 and C K soft X-ray emission spectra of the interface of the Ti(50 nm)/4H-SiC(substrate) system, thermally annealed from 800°C to 1000°C and characterized by soft X-ray emission spectroscopy (SXES), revealed the formation of a reacted region composed of silicides with Ti 5 Si 3 as the majority formed species and carbides in TiC-like bonding. Also, the photoemission electron microscopy (PEEM) imaging of Ti(10 nm) film on 3C-SiC surface during in situ heat treatment showed the formation of island structures (in ring clusters) at ~ 800°C.


1982 ◽  
Vol 25 (5) ◽  
pp. 2838-2844 ◽  
Author(s):  
K. S. Srivastava ◽  
Shiv Singh ◽  
A. K. Srivastava ◽  
R. S. Nayal ◽  
Amita Chaubey ◽  
...  

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